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Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

Soetedjo, Hariyadi and Siswanto, Bambang and Aziz, Ihwanul and Sudjatmoko, sudjatmoko (2018) Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering. Elsevier Science Direct, 8. pp. 903-907.

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Abstract

Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm−3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

Item Type: Article
Subjects: Isotop dan Radiasi
Isotop dan Radiasi > Produksi Isotop dan Sumber Radiasi > Akselerator
Rekayasa Perangkat dan Fasilitas Nuklir
Divisions: Pusat Sains dan Teknologi Akselerator
Depositing User: EDITOR PSTA BATAN
Date Deposited: 03 Jun 2018 10:26
Last Modified: 03 Jun 2018 10:37
URI: http://repo-nkm.batan.go.id/id/eprint/2770

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